Carrier bonded 1550 nm VCSEL with InP substrate removal

Details Carrier bonded 1550 nm VCSEL with InP substrate removal Carrier bonded 1550 nm VCSEL with InP substrate removal

2007-10-23

2007-10-23

Nguyen, Dung (Michael) T. (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050110

Reexamination Certificate

active

11007081

ABSTRACT:
A vertical cavity surface emitting laser (VCSEL) structure includes a bottom distributed Bragg reflector (DBR) arranged over a substrate; a metal layer interposed between the bottom DBR and the substrate, wherein the metal layer and bottom DBR form a composite mirror structure. A patterned dielectric layer may be interposed between the metal layer and the bottom DBR to reduce a deleterious chemical reaction between the metal layer and the bottom DBR. The metal layer directly contacts a portion of the bottom DBR to enhance the electrical and thermal conductivity of the VCSEL structure.

REFERENCES:
patent: 6362069 (2002-03-01), Forrest et al.
patent: 6549556 (2003-04-01), Hwang et al.
Koley, et al.,Dependence of Lateral Oxidation Rate on Thickness of AlAs layer of Interest as a Current Aperture in Vertical-Cavity Surface-Emitting Laser Structures, Journal of Applied Physics, vol. 84, No. 1, Jul. 1, 1998, pp. 600-605.
Osinski, et al.,Temperature and Thickness Dependence of Steam Oxidation of AlAs in Cylindrical Mesa Structures, IEEE Photonics Technology Letters, vol. 13, No. 7, Jul. 2001, pp. 687-689.
Choe, et al.,Lateral Oxidation of AlAs layers at Elevated Water Vapour Pressure Using a Closed-Chamber System, Semiconductor Science Technology, vol. 15, Aug. 1, 2000, pp. L35-L38.
Tao, et al.,Wet-Oxidation of Digitally Alloyed AlGaAs, National Nanofabrication Users Network, pp. 74-75.

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