Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-09-26
2006-09-26
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000, C257SE29070, C977S748000, C977S938000
Reexamination Certificate
active
07112816
ABSTRACT:
A carbon nanotube sensor and a method of producing the carbon nanotube sensor are disclosed. The sensor detects small particles and molecules. The sensor includes a gate, a source and a drain positioned on the gate, and a carbon nanotube grown from a catalytic material and extending from one of the source and the drain. The method includes the step of functionalizing an end of the carbon nanotube with a receptor. As such, the carbon nanotube is receptive to the small particles and molecules. The carbon nanotube is driven at a resonance, and the resonance of the carbon nanotube is measured when the end of the carbon nanotube is free of the small particles and the molecules. The method includes monitoring for a change in the resonance to detect the association of the small particles and molecules with the end of the carbon nanotube.
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Bhansali Shekhar
Schlaf Rudiger
Howard & Howard Attnys.
Jackson Jerome
University of South Flordia
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