Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-03-02
2009-08-25
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S020000, C257S022000, C257S024000, C257SE29070, C257SE29297, C257SE51040, C977S732000, C977S742000, C977S762000
Reexamination Certificate
active
07579618
ABSTRACT:
A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.
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Huynh Andy
Northrop Grumman Corporation
Rothwell Figg Ernst & Manbeck P.C.
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