Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Reexamination Certificate
2005-04-05
2005-04-05
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
C117S106000, C117S924000, C423S44500R
Reexamination Certificate
active
06875274
ABSTRACT:
The present invention provides a heterostructure which includes a carbon nanotube covalently linked to at least one nanocrystal. Methods for making such heterostructures, and methods for modifying the physical properties of nanotubes are also provided.
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Banerjee Sarbajit
Wong Stanislaus S.
Hoffmann & Baron , LLP
Kunemund Robert
The Research Foundation of State University of New York
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