Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-04-26
2011-04-26
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE29002, C257SE21002, C257SE27001, C438S478000, C438S900000, C977S742000, C977S779000, C977S762000
Reexamination Certificate
active
07932510
ABSTRACT:
A method for manufacturing carbon nanotubes includes the steps of: (a) depositing catalytic fine particles containing Al—Fe, Zr—Co or Hf—Co on a base body; and (b) growing carbon nanotubes on the catalytic fine particles deposited on the base body.
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Sato, Shintaro et al., “Carbon nanotube growth from titanium-cobalt bimetallic particles as a catalyst”, Chemical Physics Letters, vol. 402, pp. 149-154.
Kondo Daiyu
Sato Shintaro
Fujitsu Limited
Mandala Victor
Westerman Hattori Daniels & Adrian LLP
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