Carbon nanotube device fabrication

Electric lamp and discharge devices – With support and/or spacing structure for electrode and/or... – For plural electrodes of discharge device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE51040, C427S249100, C313S238000, C313S311000

Reexamination Certificate

active

07466069

ABSTRACT:
A carbon nanotube device in accordance with the invention includes a support structure including an aperture extending from a front surface to a back surface of the structure. At least one carbon nanotube extends across the aperture and is accessible through the aperture from both the front surface and the back surface of the support structure.

REFERENCES:
patent: 6297063 (2001-10-01), Brown et al.
patent: 6333016 (2001-12-01), Resasco et al.
patent: 6346189 (2002-02-01), Dai et al.
patent: 6350488 (2002-02-01), Lee et al.
patent: 6361861 (2002-03-01), Gao et al.
patent: 6515339 (2003-02-01), Shin et al.
patent: 6528020 (2003-03-01), Dai et al.
patent: 6555362 (2003-04-01), Hidaka et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6566983 (2003-05-01), Shin
patent: 6605894 (2003-08-01), Choi et al.
patent: 6689674 (2004-02-01), Zhang et al.
patent: 6706402 (2004-03-01), Rueckes et al.
patent: 6706566 (2004-03-01), Avouris et al.
patent: 6891227 (2005-05-01), Appenzeller et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6942921 (2005-09-01), Rueckes et al.
patent: 7120047 (2006-10-01), Segal et al.
patent: 2001/0009693 (2001-07-01), Lee et al.
patent: 2002/0014667 (2002-02-01), Shin et al.
patent: 2002/0046872 (2002-04-01), Smalley et al.
patent: 2002/0167374 (2002-11-01), Hunt et al.
patent: 2002/0172767 (2002-11-01), Grigorian et al.
patent: 2003/0157333 (2003-08-01), Ren et al.
patent: 2003/0186167 (2003-10-01), Johnson, Jr. et al.
patent: 2003/0214054 (2003-11-01), Awano et al.
patent: 2004/0043527 (2004-03-01), Bradley et al.
patent: 2004/0132070 (2004-07-01), Star et al.
patent: 2004/0144972 (2004-07-01), Dai et al.
patent: 2004/0200734 (2004-10-01), Co et al.
patent: 2005/0224778 (2005-10-01), Dubin et al.
patent: 2006/0006377 (2006-01-01), Golovchenko et al.
patent: 2006/0065887 (2006-03-01), Tiano et al.
patent: 2006/0158760 (2006-07-01), Portico Ambrosio et al.
patent: 2007/0012980 (2007-01-01), Duan et al.
patent: 102 50 829 (2002-10-01), None
patent: WO 01/44796 (2001-06-01), None
patent: WO 02/26624 (2002-04-01), None
patent: WO 02/054505 (2002-07-01), None
patent: WO 02/092505 (2002-11-01), None
patent: WO 2004/040616 (2004-05-01), None
Kong et al., “Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers,” Nature, vol. 395, pp. 878-881, Oct. 29, 1998.
Fan et al., “Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties,” Science, vol. 283, pp. 512-514, Jan. 22, 1999.
Martel et al., “Single- and multi-wall carbon nanotube field-effect transistors,” Appl. Phys. Lett., vol. 73, No. 17, pp. 2447-2449, Oct. 26, 1998.
Ren et al., “Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot,” Appl. Phys. Letts., vol. 75, No. 8, pp. 1086-1088, Aug. 23, 1999.
Cassell et al., “Directed Growth of Free-Standing Single-Walled Carbon Nanotubes,” J. Am. Chem. Soc., vol. 121, pp. 7975-7976, 1999.
Seeger et al., “SiOx-coating of carbon nanotubes at room temperature,” Chem. Phys. Lett., vol. 339, pp. 41-46, May 4, 2001.
Zhang et al., “Electric-field-directed growth of aligned single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 79, No. 19, pp. 3155-3157, Nov. 5, 2001.
Wind et al., “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes,” Appl. Phys. Lett., vol. 80, No. 20, pp. 3817-3819, May 20, 2002.
Franklin et al., “Integration of suspended carbon nanotube arrarys into electronic devices and electromechanical systems,” Appl. Phys. Lett., vol. 81, No. 5, pp. 913-915, Jul. 29, 2002.
Homma et al., “Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars,” Appl. Phys. Lett., vol. 81, No. 12, pp. 2261-2263, Sep. 16, 2002.
Ural et al., “Electric-field-aligned growth of single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 81, No. 18, pp. 3464-3466, Oct. 28, 2002.
Campbell et al., “Simple catalyst for the growth of small-diameter carbon nanotubes,” Appl. Phys. Lett., vol. 81, No. 24, pp. 4586-4588, Dec. 9, 2002.
Javey et al., “High-k dielectrics for advanced carbon-nanotube transistors and logic gates,” Nature Materials, vol. 1, pp. 241-246, Dec. 2002.
Whitsitt et al., “Silica Coated Single Walled Carbon Nanotubes,” Nano Letters, vol. 3, No. 6, pp. 775-778, 2003.
Zambov et al., “Template-Directed CVD of Dielectric Nanotubes,” Chem. Vap. Deposition, vol. 9, No. 1, pp. 26-33, 2003.
Marty et al., “Self-assembled single wall carbon nanotube field effect transistors,” IEEE Nano, vol. 2, pp. 240-243, 2003.
Han et al., “Coating Single-Walled Carbon Nanotubes with Tin Oxide,” Nano Letters, vol. 3, No. 5, pp. 681-683, 2003.
Chung et al., “Nanoscale gap fabrication and integration of carbon nanotubes by micromachining,” Sensors and Actuators A, vol. 104, pp. 229-235, 2003.
Peng et al., “Patterned growth of single-walled carbon nanotube arrays from a vapor-deposited Fe catalyst,” Appl. Phys. Lett., vol. 83, No. 20, pp. 4238-4240, Nov. 17, 2003.
Chin et al., “Optical limiting properties of amorphous SixNy and SiC coated carbon nanotubes,” Chem. Phys. Lett., vol. 383, pp. 72-75, 2004.
Radosavljevic et al., “High performance of potassium n-doped carbon nanotube field-effect transistors,” Appl. Phys. Lett., vol. 84, No. 18, pp. 3693-3695, May 3, 2004.
Graham et al., “Towards the integration of carbon nanotubes in microelectronics,” Diamond and Related Materials, vol. 13, pp. 1296-1300, 2004.
Peng et al., “Coulomb blockade in suspended Si3N4-coated single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 84, No. 26, pp. 5428-5430, Jun. 28, 2004

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Carbon nanotube device fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Carbon nanotube device fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carbon nanotube device fabrication will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4031810

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.