Semiconductor device manufacturing: process – Miscellaneous
Reexamination Certificate
2006-12-14
2009-12-15
Purvis, Sue (Department: 2826)
Semiconductor device manufacturing: process
Miscellaneous
C257SE51040, C977S888000
Reexamination Certificate
active
07632762
ABSTRACT:
Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e.g., by application of bias voltage) in an amount sufficient to form the semiconducting device. The devices of the invention include, but not limited to, chemical or biological sensors, carbon nanotube field-effect transistors (CNFETs), tunnel junctions, Schottky junctions, and multi-dimensional nanotube arrays.
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Carey Charles
Czerw Richard
Farrell Brian
Gannon John
Tiano Thomas
Dickstein & Shapiro LLP
Foster Miller Inc.
Purvis Sue
Sandvik Benjamin P
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