Carbon-modulated breakdown voltage SiGe transistor for low...

Details Carbon-modulated breakdown voltage SiGe transistor for low... Carbon-modulated breakdown voltage SiGe transistor for low...

2005-04-12

2005-04-12

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S183000, C257S200000, C257S197000, C257S198000, C257S076000, C257S542000, C257S552000, C257S565000, C257S077000, C257S096000, C257S232000, C438S312000, C438S235000, C438S309000, C438S153000

Reexamination Certificate

active

06878976

ABSTRACT:
Selectively implanting carbon in a transistor lowers the collector-to-emitter breakdown (BVCEO) of the transistor. This transistor, with the lowered BVCEO, is then used as a “trigger” device in an Electrostatic Discharge (ESD) power clamp comprising a first low breakdown trigger device and a second high breakdown clamp device. ESD power clamps are constructed using epitaxial base pseudomorphic Silicon Germanium heterojunction transistors in a common-collector Darlington configuration.

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