Carbon memory

Details Carbon memory Carbon memory

2007-03-08

2010-06-01

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257SE51040, C257SE23165, C438S399000

Reexamination Certificate

active

07728405

ABSTRACT:
An integrated circuit including a memory cell and methods of manufacturing the integrated circuit are described. The memory cell includes a resistive memory element including a top contact, a bottom contact, and a carbon storage layer disposed between the top contact and the bottom contact. The memory cell operates at a voltage in a range of approximately 0.5V to approximately 3V, and at a current in a range of approximately 1 μA to approximately 150 μA.

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