Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1993-10-05
1994-11-01
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
257188, 257197, 257198, H01L 29161, H01L 29205
Patent
active
053609867
ABSTRACT:
A IV--IV semiconductor device having a narrowed bandgap characteristic compared to silicon and method is provided. By incorporating carbon into silicon at a substitutional concentration of between 0.5% and 1.1%, a semiconductor device having a narrowed bandgap compared to silicon and good crystalline quality is achieved. The semiconductor device is suitable for semiconductor heterojunction devices that use narrowed bandgap regions.
REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 5177025 (1993-01-01), Turner et al.
patent: 5198689 (1993-03-01), Fujioka
Tang, Z. R. et al., "SiGe Heterojunction Bipolar Transistors with Thin .alpha.-Si Emitters", IEEE Electron Device Letters, vol. 14, No. 9, Sep. 1993, pp. 438-440.
A. Demkov et al., "Theoretical Investigation of Random Si-C Alloys," The American Physical Society, Physical Review B, vol. 48, No. 4, Jul. 15, 1993, pp. 2207-2214.
J. A. Borders et al., "Formation of SiC in Silicon by Ion Implantation," Applied Physics Letters, vol. 18, No. 11, 1 Jun. 1971, pp. 509-511.
Barbee Joe E.
Guay John
Ingrassia Vincent B.
Jackson Jerome
Koch William E.
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