Carbon-doped hard mask and method of passivating structures...

Details Carbon-doped hard mask and method of passivating structures... Carbon-doped hard mask and method of passivating structures...

2005-01-25

2005-01-25

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S446000, C430S005000

Reexamination Certificate

active

06846569

ABSTRACT:
A carbon-doped hard mask includes a dielectric material containing carbon which is released from the hard mask during a metal etching process. The released carbon is deposited on and bonds to sidewalls of the metal structure during the metal etching process to passivate the sidewalls of the metal structure and prevent lateral etching of the sidewalls during the metal etching process. The released carbon also prevents accumulation of metal residue in open fields.

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patent: 6350700 (2002-02-01), Schinella et al.
patent: 6368979 (2002-04-01), Wang et al.
patent: 6576404 (2003-06-01), Hu et al.
patent: 05129252 (1993-05-01), None

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