Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-11-13
2007-11-13
Nguyen, Michael Dung (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046011
Reexamination Certificate
active
10078473
ABSTRACT:
GaAs(1−x)Sbxlayers are grown by MOCVD. For lattice matching with InP, x is set to 0.5, while beneficial alternatives include setting x to 0.23, 0.3, and 0.4. During MOVCD, TMGa (or TEGa), TMSb, and AsH3(or TBAs) are used to fabricate the GaAs(1−x )Sbxlayer. Beneficially, the GaAs(1−x)Sbx layer's composition is controlled by the ratio of As to Sb. The MOCVD growth temperature is between 500° C. and 650° C. The GaAs(1−x)Sbxlayer is beneficially doped using CCl4or CBr4. A heavily doped GaAs(1−x)Sbxlayer can be used to form a tunnel junction with n-doped layers of InP, AlInAs, or with lower bandgap materials such as AlInGaAs or InGaAsP. Such tunnel junctions are useful for producing long wavelength VCSELs.
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Finisar Corporation
Nguyen Michael Dung
Workman Nydegger
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