Carbide emitter mask etch stop

Details Carbide emitter mask etch stop Carbide emitter mask etch stop

2006-04-25

2006-04-25

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S571000, C257S197000, C257S586000, C257S378000

Reexamination Certificate

active

07034379

ABSTRACT:
Bipolar transistors and methods for fabricating bipolar transistors are disclosed wherein an emitter-base dielectric stack is formed between emitter and base structures, comprising a carbide layer situated between first and second oxide layers. The carbide layer provides an etch stop for etching the overlying oxide layer, and the underlying oxide layer provides an etch stop for etching the carbide layer to form an emitter-base contact opening.

REFERENCES:
patent: 6255211 (2001-07-01), Olsen et al.
patent: 6261892 (2001-07-01), Swanson
patent: 6444535 (2002-09-01), Schuegraf
patent: 6599814 (2003-07-01), Vanhaelemeersch et al.
patent: 6620732 (2003-09-01), Schuegraf
patent: 2003/0096486 (2003-05-01), Chung et al.

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