Capture of residual refractory metal within semiconductor...

Details Capture of residual refractory metal within semiconductor... Capture of residual refractory metal within semiconductor...

2007-01-09

2008-08-05

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S536000

Reexamination Certificate

active

07408239

ABSTRACT:
There is provided a semiconductor device with a configuration in which a dummy silicide area11is provided in the vicinity of a non-silicide area2to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.

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