Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2005-08-16
2011-11-15
Kornakov, Michael (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S929000
Reexamination Certificate
active
08057597
ABSTRACT:
The present invention consists in obtaining, with the capsule described, a vertical gradient favorable for diamond growth that prevails over any radial gradient by means of heating discs placed at the ends of the heating area, which implies a considerable control over the growth conditions. More specifically, in regard to the rate of growth, it allows for a better control of the quality of large crystals. Another important novelty is to use a source of carbon with a special design formed by cylindrical and conical hollows (graphite, amorphous carbon, diamond or other) with a solvent metal with a number of gases that are introduced in the capsule.Also, a nitrogen scavenger is used to avoid the formation of nitrides, carbides and oxides that are harmful for the growth and that as a significant novelty is placed outside the reaction area.
REFERENCES:
patent: 3407445 (1968-10-01), Strong
patent: 4147255 (1979-04-01), Ishizuka
patent: 4301134 (1981-11-01), Strong
patent: 4409193 (1983-10-01), Sato et al.
patent: 4632817 (1986-12-01), Yazu et al.
patent: 6030595 (2000-02-01), Sumiya et al.
Wakatsuki, et al. “Growth of Diamond with Zr-containing Molten Metal Solvents and Metal Elements as Incorporated Impurities,”Diamond and Related Materials,, vol. 8, pp. 1438-1440, 1999.
International Search Report issued in International Application No. PCT/EP2005/000462 dated Dec. 20, 2005.
International Preliminary Report on Patentability issued in International Application No. PCT/EP2005/000462.
Written Opinion issued in International Application No. PCT/EP2005/000462.
Bagriantsev Dmitri
Martin Parrondo Ramon
Hultquist Steven
Hultquist IP
Instituto de Monocristales, S.L.
Kalish Irina
Kornakov Michael
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