Capping technique for zone-melting recrystallization of insulate

Details Capping technique for zone-melting recrystallization of insulate Capping technique for zone-melting recrystallization of insulate

1989-09-22

1991-11-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG3, 148DIG15, 148DIG71, 148DIG74, 148DIG152, 148DIG154, 437174, 437247, 437963, H01L 2120

Patent

active

050666100

ABSTRACT:
Wetting of encapsulated silicon-on-insulator (SOI) films during a zone-melting recrystallization (ZMR) process is enhanced by a high temperature anneal of the SOI structure in a reactive nitrogen-containing ambient to introduce nitrogen atoms to the polysilicon/silicon dioxide cap interface. The technique is not only more effective in present in cap fracture and enhancing crystal quality but is also susceptible to batch processing with noncritical parameters in a highly efficient, uniform manner. Preferably, the cap is exposed to 100% ammonia at 1100.degree. C. for one to three hours followed by a pure oxygen purge for twenty minutes. The ammonia atmosphere is reintroduced at the same temperature for another one to three hour period before ZMR. The process is believed to result in less than a half monolayer of nitrogen at the interior cap interface thereby significantly lowering the contact angle and improving the wetting character of the SOI structure.

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