Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2007-09-11
2007-09-11
Nguyen, Hoa T. (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
10779356
ABSTRACT:
A capping layer employed with a spin valve sensor includes a first capping layer, formed from a refractory metal, and a second capping layer formed from silicon. The interface between the refactory metal layer and the silicon layer form a silicide that provides a large compressive stress on the underlying spin valve sensor. The compressive stress, advantageously, increases the pinning field in the self-pinned pinned layer structure, while providing a high resistivity so that less sense current is shunted by the capping layer structure compared to an all metal capping layer structure that provides a comparable compressive stress.
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Freitag James M.
Pinarbasi Mustafa M.
Blouin Mark
Hitachi Global Storage Technologies - Netherlands B.V.
Nguyen Hoa T.
Silicon Valley Patent & Group LLP
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