Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-05-01
2007-05-01
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S604000, C438S933000, C257SE21170, C257SE21127, C257SE21215
Reexamination Certificate
active
10970509
ABSTRACT:
A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at least one layer of germanium formed on a surface of a ceramic substrate and having at least one capping layer formed on a surface of the layer of germanium is also provided. In addition, a method of forming a thin film germanium structure is provided including forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
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Burr & Brown
Heritage Power LLC
Nhu David
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