Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Patent
1998-05-26
2000-11-14
Booth, Richard
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
438294, 438295, 438296, 438318, 438353, 438355, 438359, H01L 2176, H01L 21331, H01L 21336
Patent
active
06146970&
ABSTRACT:
A method for forming a capped shallow trench isolation (CaSTI) structure begin by etching a trench opening (210). The opening (210) is filled with an oxide or like trench fill material (216b) via a deposition and chemical mechanical polish (CMP) step. The plug (216b) is reactive ion etched (RIE) to recess a top of the plug (216b) into the trench opening (210) to form a recessed plug region (216c). A silicon nitride or oxynitride capping layer (218b) is then formed over the recessed plug region (216c) via another deposition and polishing step. The nitride cap layer (218b) protects the underlying region (216c) from erosion due to active area preparation, cleaning, and processing.
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Chen Mike Hsiao-Hui
Poon Stephen Shiu-Kong
Witek Keith E.
Booth Richard
Motorola Inc.
Nguyen Ha Tran
Witek Keith E.
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