Capped anneal

Details Capped anneal Capped anneal

1996-06-05

1998-04-28

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437247, 148DIG3, 148DIG65, H01L 21324

Patent

active

057443750

ABSTRACT:
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of Al.sub.z Ga.sub.1-z,As (106), next annealing out defects with the Al.sub.z Ga.sub.1-z As cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.

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