Capless annealing compound semiconductors

Details Capless annealing compound semiconductors Capless annealing compound semiconductors

1977-06-06

1979-11-20

Dean, R.

Metal treatment

Compositions

Heat treating

148 15, 148 203, C22F 102

Patent

active

041749820

ABSTRACT:
A method is disclosed for capless annealing compound semiconductors such as ion-implanted GaAs semiconductors. The surface of the semiconductor to be protected during annealing is placed in loose physical contact with an inert material such as powdered graphite. The assembly is placed in a controlled atmosphere and heated to the annealing temperature where it is maintained until annealed. The semiconductor is cooled and then removed from the controlled atmosphere and inert material. In one embodiment, a volatile one of the elements in the compound is introduced into the inert material.

REFERENCES:
patent: 4002505 (1977-01-01), Bult

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