Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-04-28
2000-08-08
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257296, 257306, H01L 2900
Patent
active
061005746
ABSTRACT:
The present invention relates to a method for, in the manufacturing of an integrated circuit, producing a capacitor with metallic conducting electrodes and to the capacitor itself and to the integrated circuit, which preferably are intended for high-frequency applications. According to the invention, a lower electrode (17,63,67) is produced through depositing a first metal layer (15) onto a layer structure (11) comprising lowermost a substrate and uppermost an insulating layer (13). An insulating layer (19) is deposited over the first metal layer (15), whereafter an electrical connection (25) to the lower electrode (17,63,67) is produced by etching a via hole (21) through said insulating layer (19), which via hole (21) is plugged. There-after the first metal layer (15) is uncovered within a predetermined area (33), whereafter a dielectric layer (35) is deposited, patterned and etched in such a way that it overlaps (39) said predetermined area (33). Finally, an upper electrode (47,63,67) and a connecting layer (43) are produced through a second metal layer (41) being deposited on the structure (40) achieved thereby, which second metal layer (41) is patterned and etched in such a way that the upper electrode (47,63,67) overlaps (49) said predetermined area (33) and the connecting layer (43) overlaps the plugged via hole (21).
REFERENCES:
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patent: 5406447 (1995-04-01), Miyazaki
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patent: 5563762 (1996-10-01), Leung et al.
patent: 5594278 (1997-01-01), Uchiyama
patent: 5627391 (1997-05-01), Shimada et al.
Norstrom Hans
Nygren Stefan
Carroll J.
Telefonaktiebolaget LM Ericsson
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