Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2005-11-28
2008-12-30
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C438S396000, C257SE21008, C257SE21012
Reexamination Certificate
active
07470596
ABSTRACT:
Capacitors having a horizontally folded dielectric layer and methods of manufacturing is the same are provided. An example method for manufacturing a capacitor includes forming a first insulating layer pattern above a substrate, forming a first silicon epitaxial growth layer above a region of the silicon substrate exposed by the first insulating layer pattern through epitaxial growth of a first silicon layer, selectively etching the first insulating layer pattern, forming a dielectric layer pattern above the lateral surface of the first silicon epitaxial growth layer in a shape of a spacer, and forming a second silicon epitaxial growth layer above the silicon substrate through epitaxial growth of a second silicon layer. A capacitor including electrodes made of the first and second silicon epitaxial growth layers with the dielectric layer pattern formed therebetween may be formed by such a method.
REFERENCES:
patent: 5994197 (1999-11-01), Liao
patent: 2003/0001187 (2003-01-01), Basceri et al.
patent: 2004/0042155 (2004-03-01), Ritter et al.
patent: 2004/0161884 (2004-08-01), Lee et al.
patent: 2005/0112851 (2005-05-01), Lee et al.
patent: 2005/0133833 (2005-06-01), Tsui
patent: 2005/0206469 (2005-09-01), Lin et al.
patent: 2007/0090456 (2007-04-01), Lee
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Huber Robert
Malsawma Lex
LandOfFree
Capacitors having a horizontally folded dielectric layer and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitors having a horizontally folded dielectric layer and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitors having a horizontally folded dielectric layer and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4051646