Capacitors having a horizontally folded dielectric layer and...

Details Capacitors having a horizontally folded dielectric layer and... Capacitors having a horizontally folded dielectric layer and...

2005-11-28

2008-12-30

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C438S396000, C257SE21008, C257SE21012

Reexamination Certificate

active

07470596

ABSTRACT:
Capacitors having a horizontally folded dielectric layer and methods of manufacturing is the same are provided. An example method for manufacturing a capacitor includes forming a first insulating layer pattern above a substrate, forming a first silicon epitaxial growth layer above a region of the silicon substrate exposed by the first insulating layer pattern through epitaxial growth of a first silicon layer, selectively etching the first insulating layer pattern, forming a dielectric layer pattern above the lateral surface of the first silicon epitaxial growth layer in a shape of a spacer, and forming a second silicon epitaxial growth layer above the silicon substrate through epitaxial growth of a second silicon layer. A capacitor including electrodes made of the first and second silicon epitaxial growth layers with the dielectric layer pattern formed therebetween may be formed by such a method.

REFERENCES:
patent: 5994197 (1999-11-01), Liao
patent: 2003/0001187 (2003-01-01), Basceri et al.
patent: 2004/0042155 (2004-03-01), Ritter et al.
patent: 2004/0161884 (2004-08-01), Lee et al.
patent: 2005/0112851 (2005-05-01), Lee et al.
patent: 2005/0133833 (2005-06-01), Tsui
patent: 2005/0206469 (2005-09-01), Lin et al.
patent: 2007/0090456 (2007-04-01), Lee

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