Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-05-29
2000-04-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257534, 257738, H01L 2900
Patent
active
060464895
ABSTRACT:
A capacitor with a high dielectric-constant dielectric and a thick lower electrode decreases the leakage current. The thick lower electrode is on an interlayer insulating layer. Typically, the interlayer insulating layer is formed on or over a semiconductor substrate. The lower electrode has a top face, a bottom face, and side faces. The bottom face of the lower electrode is adjacent to the interlayer insulating layer. An insulating cap or cover layer is on and contacts the top face of the lower electrode. The insulating cap or cover layer covers the top face of the lower electrode and uncovers the side faces of the lower electrode. A capacitor dielectric layer covers and contacts the side faces of the lower electrode and the insulating cap or cover layer. An upper electrode is on and contacts the capacitor dielectric layer. The capacitor dielectric layer is sandwiched by the upper and lower electrodes to thereby constitute a capacitor structure.
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NEC Corporation
Saadat Mahshid
Wilson Allan R.
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