Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2007-06-12
2007-06-12
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C257SE21008, C257SE21210
Reexamination Certificate
active
10819294
ABSTRACT:
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.
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Notice of the Preliminary Rejection from the Korean Intellectual Property Office mailed Jan. 23, 2006, in Korean patent application No. 2003-83399, and English translation.
Notice of Second Office Action from the State Intellectual Property Office of the People's Republic of China mailed Jan. 26, 2007, in Chinese patent application No. 2004-10062627.6, and English trandslation.
Kil Deok-Sin
Roh Jae-Sung
Sohn Hyun-Chul
Dang Trung
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hynix / Semiconductor Inc.
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