Capacitor used in an integrated circuit and comprising opposing

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361303, 361311, 257535, H01G 406

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active

054064473

ABSTRACT:
On a first conductor layer of a capacitor element of an IC and in contact with a dielectric film made of a particular dielectric material, a first barrier metal film is made of platinum, palladium, tantalum, or titanium nitride. A second barrier metal film is made of a similar material in contact with the dielectric film and on a second conductor layer. The particular dielectric material is either tantalum oxide or a perovskite oxide, such as strontium titanate or a composite of lead zirconate and lead titanate. In cooperation with such a dielectric film, the first and the second barrier metal films make it possible to provide a compact capacitor having a great and reliable capacitance. The capacitor element is manufactured like a conventional one except for use of the particular dielectric material and for manufacturing steps of forming the first and the second barrier metal films and may be an MOS, MIS, or MIM capacitor or a multilayer wired capacitor.

REFERENCES:
patent: 4423087 (1983-12-01), Howard et al.
patent: 4891684 (1990-02-01), Nishioka et al.
patent: 4903110 (1990-02-01), Aono
patent: 5005102 (1991-04-01), Larson
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5111355 (1992-05-01), Anand et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5293510 (1994-03-01), Takenaka

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