Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-10-30
2000-06-20
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257295, 257306, 257310, H01L 2900
Patent
active
060780932
ABSTRACT:
A semiconductor device capacitor structure comprises a semiconductor substrate having an impurity diffusion region; an insulating layer formed on the semiconductor substrate and having a contact hole on the impurity diffusion region; a first lower electrode of a half ring type formed on the insulating film along an upper edge of the contact hole; a second lower electrode formed on a surface of the substrate exposed through the contact hole, a wall of the contact hole, and the first lower electrode; a dielectric layer formed on the first and second lower electrodes; and an upper electrode formed on the dielectric layer. This structure increases capacitance, thereby improving the characteristics and reliability of the device.
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Carroll J.
LG Semicon Co. Ltd.
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