Capacitor structure in a semiconductor device

Details Capacitor structure in a semiconductor device Capacitor structure in a semiconductor device

2007-05-24

2010-06-08

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

C257S503000, C257S532000, C257S501000, C257S506000, C257S446000, C257S307000, C257S508000, C257S535000, C257SE29001, C257SE21008, C257SE29342, C257SE29343, C257SE21540, C257SE21574, C257SE21628, C438S393000

Reexamination Certificate

active

07732889

ABSTRACT:
A semiconductor device comprises an integrated circuit formed on a substrate with a signal interface and at least one isolator capacitor. The integrated circuit comprises a plurality of interleaved inter-metal dielectric layers and interlayer dielectrics formed on the substrate, a thick passivation layer formed on the plurality of the interleaved inter-metal dielectric layers and interlayer dielectrics, and a thick metal layer formed on the thick passivation layer. The thick passivation layer has a thickness selected to be greater than the isolation thickness whereby testing for defects is eliminated. The one or more isolator capacitors comprise the thick metal layer and a metal layer in the plurality of interleaved inter-metal dielectric layers and interlayer dielectrics separated by the thick passivation layer as an insulator.

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