Capacitor structure in a semiconductor device

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C361S306100, C361S303000, C361S311000, C361S313000, C361S321100, C361S321500

Reexamination Certificate

active

06980414

ABSTRACT:
A capacitor structure is provided that includes a substrate, a first group of conducting strips, a second group of conducting strips, a third group of conducting strips, and a fourth group of conducting strips. The capacitor structure can further include a first set of vertical vias, a second set of vertical vias, a third set of vertical vias, and a fourth set of vertical vias.

REFERENCES:
patent: 3034445 (1962-05-01), Pelladeau
patent: 3255324 (1966-06-01), Ovshinsky
patent: 3460010 (1969-08-01), Domenico et al.
patent: 4017820 (1977-04-01), Ross
patent: 4409608 (1983-10-01), Yoder
patent: 4419713 (1983-12-01), Levinson
patent: 4423371 (1983-12-01), Senturia et al.
patent: 4481487 (1984-11-01), Brelm et al.
patent: 4890192 (1989-12-01), Smith
patent: 4929998 (1990-05-01), Boudewijns
patent: 4937649 (1990-06-01), Shiba
patent: 4949217 (1990-08-01), Ngo
patent: 4972252 (1990-11-01), Maekawa
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5172299 (1992-12-01), Yamada et al.
patent: 5208725 (1993-05-01), Akcasu
patent: 5245505 (1993-09-01), Shiga et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5903493 (1999-05-01), Lee
patent: 6001702 (1999-12-01), Cook et al.
patent: 6150707 (2000-11-01), Cook et al.
patent: 6266226 (2001-07-01), Hayashi
patent: 6312963 (2001-11-01), Chou et al.
patent: 6414806 (2002-07-01), Gowda et al.
patent: 6445056 (2002-09-01), Nakashima
patent: 6459561 (2002-10-01), Galvagni et al.
patent: 6501610 (2002-12-01), Sugawara et al.
patent: 6570210 (2003-05-01), Sowlati et al.
patent: 6597562 (2003-07-01), Hu et al.
patent: 6635916 (2003-10-01), Aton
patent: 76 35 588 (1978-02-01), None
patent: 41 13 576 (1991-10-01), None
patent: 995334 (1965-06-01), None
patent: 1 247 985 (1971-09-01), None
patent: 2 060 253 (1981-04-01), None
patent: 42-5946 (1942-03-01), None
patent: 52-122674 (1951-03-01), None
patent: 52-122675 (1951-03-01), None
patent: 56-16936 (1954-07-01), None
patent: 56-96620 (1954-12-01), None
patent: 57-157128 (1956-03-01), None
patent: 57-157129 (1956-03-01), None
patent: 57-215803 (1962-01-01), None
patent: 46-24658 (1971-07-01), None
patent: 46-43172 (1971-12-01), None
patent: 50-42369 (1975-04-01), None
patent: 53-61051 (1978-06-01), None
patent: 54-101153 (1979-08-01), None
patent: 57-52120 (1982-03-01), None
patent: 52-051552 (1983-03-01), None
patent: 58-051552 (1983-03-01), None
patent: 58-56432 (1983-04-01), None
patent: 58-66632 (1983-05-01), None
patent: 58-097854 (1983-06-01), None
patent: 58-159367 (1983-09-01), None
patent: 59-91718 (1984-06-01), None
patent: 59-105341 (1984-06-01), None
patent: 59-105341 (1984-06-01), None
patent: 59-132613 (1984-07-01), None
patent: 59-197122 (1984-11-01), None
patent: 59-222959 (1984-12-01), None
patent: 222959 (1984-12-01), None
patent: 60-1825 (1985-01-01), None
patent: 60-4207 (1985-01-01), None
patent: 60-92604 (1985-05-01), None
patent: 60-102725 (1985-06-01), None
patent: 60-102726 (1985-06-01), None
patent: 60-102727 (1985-06-01), None
patent: 61-55936 (1986-03-01), None
patent: 61-57513 (1986-04-01), None
patent: 61-259560 (1986-11-01), None
patent: 61-263251 (1986-11-01), None
patent: 64-084616 (1989-03-01), None
patent: 01-096943 (1989-04-01), None
patent: 01-120858 (1989-05-01), None
patent: 01-133354 (1989-05-01), None
patent: 2-47024 (1990-03-01), None
patent: 02-086160 (1990-03-01), None
patent: 02-090561 (1990-03-01), None
patent: 03-257855 (1990-03-01), None
patent: 02-178963 (1990-07-01), None
patent: 02-191369 (1990-07-01), None
patent: 03-096267 (1991-04-01), None
patent: 03-133169 (1991-06-01), None
patent: 3-79416 (1991-08-01), None
patent: 03-181165 (1991-08-01), None
“Switched Capacitor-Filler Dynamic Tuning Mechanism”, Feb. 1987, No. 274, Kenneth Mason Publications, Ltd., London, England.
(Non-English Translation), Toshio Sudo, “Interconnect Capacitances And Crosstalk Noices on GaAs LSI's”, R&D Center, Toshiba Corp.
Thomas & Delphion “Electrostatic Device”, Sep. 1963, IBM Technical Disclosure Bulletin.
S.T. Nguyen and T. Proch, “Vertical Capacitor VLSI Structure For High Voltage Applications”, Dec. 1989, vol. 32, No. 7 IBM Technical Disclosure Bulletin.
P. Benedek and P. Silvester, “Capacitance Of Parallel Rectangular Plates Separated By A Dielectric Sheet”, Aug. 1972, vol. 20, Issue 8, IBM Technical Disclosure Bulletin.
IEEE Transactions, “Microwave Theory and Techniques”, vol. 38, No. 12, Dec. 1990, Publication of the IEEE Microwave Theory and Techniques Society.
G.L. Matthael, “Interdigital Band-Pass Filters”, Nov. 1962, vol. 10, Issue 6, IEEE Xplore.
G.D. Alley, “Interdigital Capacitors For Use In Lumped-Element Microwave Integrated Circuits”, May 1970, vol. 70, Issue 1, IEEE Xplore.
IEEE Transactions, “Microwave Theory and Techniques”, vol. MTT 31, No. 1, Jan. 1983, Publication of the IEEE Microwave Theory and Techniques Society.
X.Y. Che and Y.L. Chow, “Microwaves, Antennas and Propagation”, vol. 33 Part H, No. 3, Jun. 1986, IEEE Proceedings-H.
Tetsushi Sakai et al., “Elevated Electrode Integrated Circuits”, vol. SC-14, No. 2, Apr. 1979, IEEE Journal Of Solid State Circuits.
Ingo Wolff et al. “Computerized Microwave Circuit Layout and Mask Generation, Computer Models For MMIC Capacitors And Inductors”, 14thEuropean Microwave Conference, Sep. 1984.
Alley, G., “Interdigital Capacitors and Their Application to Lumped-Element Microwave Integrated Circuits” Dec. 1970, IEEE Trans. Microwave Theory Tech., vol. MTT-18, No. 12.
Aparicio, R., and Hajimiri A., “Capacity Limits and Matching Properties of Lateral Flux Integrated Capacitors,” 2001, Pasadena, California, Department of Electrical Engineering, California Institute of Technology.
Chan, C., “Analysis of MMIC Structures Using an Efficient Iterative Approach,” Jan. 1983, IEEE Trans. Microwave Theory Tech., vol. 36, No. 1(illegible document).
Cohen, S., “A Novel Metal-Insulator-Metal Structure for Field-Programmable Devices,” Jul. 1998, IEEE Trans. Electron Devices, vol. 40, No. 7.
“Gallium Arsenide,” Jan. 1988, Colloquium Digest No.: 1988/17.
“Technology Growth For The 80's, ” May 1980, IEEE Catalog No. 80CH1545-3 MTT.
Delrue, R. et al., “The Effects of a Dielectric Capacitor Layer and Metallization on the Propagation Parameters of Coplanar Waveguide for MMIC,” Aug. 1988, IEEE Trans. Microwave Theory Tech., vol. 36, No. 8.
Benecke W., Petzold, H.-C., “Micro Electro Mechanical Systems,” Feb. 1992, IEEE Catalog No. 92CH3093-2.
Esfandiari, R. et al., “Design of Interdigitated Capacitors and their Application to Gallium Arsenide Monolithic Filters,” Jan. 1983, IEEE Trans. Microwave Theory Tech., vol. 31, No. 1.
“Gallium Arsenide Processing Techniques,” 1984.
“Microwave Theory and Techniques,” Apr. 1978, IEEE Trans. Microwave Theory Tech., vol. MTT-26, No. 4.
Benedek, P., “Capacitances of a planar multiconductor configuration on a dielectric substrate by a mixed order finite-element method,” May 1976, IEEE Trans. Ciruits and Systems, vol. 23, No. 5, pp. 279-284.
“Monolithic Circuits Symposium,” Jun. 1991, IEEE Catalog No. 91CH3016-3.
Kollipara, R. et al.,Modeling and Design of Interdigital Structure, Nov. 1991, IEEE Trans. Electron Devices, vol. 38, No. 11.
Lin, J., “Two dimensional and three-dimensional interdigital capacitors as basic elements for chemical sensors,” 1991, Sensors and Actuators B, 5, pp. 223-226.
Naghed, M. et al.,Equivalent Capacitances of Coplanar Waveguide Discontinuities and Interdigitated Capacitors Using a Three-Dimensional Finite Difference Method, Dec. 1990, IEEE Trans. Microwave Theory Tech., vol. 38, No. 12.
Sato, S., et al., “An S102-Ta205Thin Film Capacitor,” Sep. 1973, IEEE Trans. Parts, Hybrids, Packaging, vol. PHP-9, No. 3.
“Conference Proceedings of the 14thEuropean Microwave Conference,”

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitor structure in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor structure in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor structure in a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3466889

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.