Capacitor structure in a bonded wafer and method of fabrication

Details Capacitor structure in a bonded wafer and method of fabrication Capacitor structure in a bonded wafer and method of fabrication

1996-10-28

1998-11-24

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257534, 257618, 257620, H01L 27108, H01L 2102

Patent

active

058411828

ABSTRACT:
A bonded wafer structure has a device wafer 18 bonded to a handle wafer 10. A capacitor including a bottom plate as the surface 11 of handle wafer 10, a dielectric layer 12 and a top plate 15 is embedded in the bonded structure. A contact trench 22 extends from the surface 8 of device wafer 18 to the top plate 15 of the embedded capacitor.

REFERENCES:
patent: 4063271 (1977-12-01), Bean et al.
patent: 4238762 (1980-12-01), McWilliams et al.
patent: 4866501 (1989-09-01), Shanefield
patent: 5151768 (1992-09-01), Aso
patent: 5493137 (1996-02-01), Satoh et al.

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