Capacitor structure for two-transistor DRAM memory cell and...

Details Capacitor structure for two-transistor DRAM memory cell and... Capacitor structure for two-transistor DRAM memory cell and...

2005-08-10

2009-02-10

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S532000, C257S071000

Reexamination Certificate

active

07488664

ABSTRACT:
A capacitor structure for a semiconductor assembly and a method for forming same are described. The capacitor structure comprises a pair of electrically separated capacitor electrodes and a capacitor electrode being common to only the pair of electrically separated capacitor electrodes.

REFERENCES:
patent: 4388121 (1983-06-01), Rao
patent: 4835589 (1989-05-01), Pfiester
patent: 4890144 (1989-12-01), Teng et al.
patent: 5122986 (1992-06-01), Lim
patent: 5389568 (1995-02-01), Yun
patent: 5597756 (1997-01-01), Fazan et al.
patent: 6215187 (2001-04-01), Ooto et al.
patent: 6438016 (2002-08-01), Keeth et al.
patent: 6444538 (2002-09-01), Kwon et al.
patent: 6455369 (2002-09-01), Forster et al.
patent: 6759704 (2004-07-01), Park
patent: 6809363 (2004-10-01), Yu et al.
patent: 7034353 (2006-04-01), Thakur et al.
patent: 2001/0006837 (2001-07-01), Kwon et al.
patent: 2004/0007725 (2004-01-01), Son
patent: 2006/0054983 (2006-03-01), Acar et al.

Affiliated with

Also associated with

Rating

Capacitor structure for two-transistor DRAM memory cell and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor structure for two-transistor DRAM memory cell and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor structure for two-transistor DRAM memory cell and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4085933