Capacitor structure for integrated circuit

Details Capacitor structure for integrated circuit Capacitor structure for integrated circuit

2007-02-16

2009-10-06

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S307000, C257S532000, C257SE27048, C257SE21012

Reexamination Certificate

active

07598592

ABSTRACT:
A capacitor structure for an integrated circuit. An insulating layer is disposed on a substrate. A first conductive line is embedded in a first level of the insulating layer. A second conductive line is embedded in a second level of the insulating layer lower than the first level and has a projection onto the substrate completely covered by the first conductive line. A third conductive line is embedded in the second level of the insulating layer and separated from the second conductive line by a predetermined space, and has a projection onto the substrate partially covered by the first conductive line. The second conductive line is coupled to the first conductive line by at least one first conductive plug and has a polarity opposite to the third conductive line.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6385033 (2002-05-01), Javanifard et al.
patent: 6819542 (2004-11-01), Tsai et al.
patent: 2004/0174655 (2004-09-01), Tsai et al.
patent: WO2005/062355 (2005-07-01), None
TW office action mailed Jul. 15, 2009.

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