Capacitor structure and fabricating method thereof

Details Capacitor structure and fabricating method thereof Capacitor structure and fabricating method thereof

2008-05-08

2010-02-16

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C257S307000, C257S308000

Reexamination Certificate

active

07662695

ABSTRACT:
Disclosed are a vertical-type capacitor and a formation method thereof. The capacitor includes a first electrode wall and a second electrode wall perpendicular to a semiconductor substrate, and at least one dielectric layer on the substrate to insulate the first electrode wall from the second electrode wall. The first electrode wall includes a plurality of first conductive layers and a plurality of first contacts, the plurality of first conductive layers being interconnected with each other by each of the plurality of first contacts. The second electrode wall includes a plurality of second conductive layers and a plurality of second contacts, the plurality of second conductive layers being interconnected with each other by each of the plurality of second contacts.

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