Capacitor structure and automated design flow for...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Reexamination Certificate

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06963122

ABSTRACT:
A capacitive structure is described that comprises a first node and a second node. The first node comprises a first pair of vertically aligned strips that are electrically connected with one or more vias and a second pair of vertically aligned strips that are electrically connected with one or more vias. The higher strips of both of the pairs are at a same metal level and the lower strips of both of the pairs are at a same lower metal level. The second node comprises, at the metal level, a first metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the higher strips. A second of the windows surround and are isolated from a second of the higher strips. The second node also comprises, at the lower metal level, a second metal structure having a pair of windows. A first of the windows surround and are isolated from a first of the lower strips. A second of the windows surround and are isolated from a second of the lower strips. The first and second metal structures are electrically connected with one or more vias.

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Aparicio, R., Hajimiri, A., “Capacity Limits and Matching Properties of Integratted Capacitors”, pp. 384-393, IEEE Journal of Solid-State Circuits, vol. 37, No., Mar. 2002.
Samavati, H., Hajimiri, A., Shahani, A., Nasserbakht, G., T. “Fractal Capacitor”, pp. 256-257, ISSCC 1998.

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