Capacitor structure

Details Capacitor structure Capacitor structure

2005-09-13

2005-09-13

Dinkins, Anthony (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C301S064600, C301S064600, C301S064600, C301S064600, C301S064600, C301S064600, C257S295000, C257S296000, C438S240000, C438S250000

Reexamination Certificate

active

06944007

ABSTRACT:
A capacitor is configured by a bottom electrode BE, an inter-electrode dielectric D, and a top electrode TE. Directly under the bottom electrode BE, for example, silicon oxide (SiO2) is disposed, and directly above the top electrode TE as well, for example, silicon oxide (SiO2) is disposed. The capacitor is covered with an insulating layer Low-k having a low dielectric constant. The insulating layer Low-k is formed from a material having as low of a dielectric constant as possible in order to reduce the parasitic capacitance between wirings. High-dielectrics High-k for suppressing the swelling of electric lines of force are disposed on side walls of an inter-electrode dielectric D. A dielectric constant of the High-dielectric High-k is at least higher than a dielectric constant of the insulating layer Low-k.

REFERENCES:
patent: 6388281 (2002-05-01), Jung et al.
patent: 6682944 (2004-01-01), Kikuchi et al.
patent: 10-275897 (1998-10-01), None
patent: 2000-36568 (2000-02-01), None

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