Capacitor of semiconductor device and method of...

Details Capacitor of semiconductor device and method of... Capacitor of semiconductor device and method of...

2007-11-20

2007-11-20

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S534000, C257SE27048, C257SE27071, C257SE27092

Reexamination Certificate

active

11024653

ABSTRACT:
A MIM capacitor includes a lower electrode disposed on a semiconductor substrate. A dielectric layer is disposed on the lower electrode to completely cover an exposed surface of the lower electrode. An upper electrode is disposed on the dielectric layer. A method for forming a MIM capacitor includes forming a lower electrode on a semiconductor substrate. A dielectric layer and an upper metal layer are formed on an entire surface of the substrate to cover the lower electrode. The dielectric and upper metal layers are patterned on the lower electrode.

REFERENCES:
patent: 2002/0160565 (2002-10-01), Lee
patent: 2003/0178728 (2003-09-01), Park et al.
patent: 2003/0232497 (2003-12-01), Xi et al.
patent: 2004/0013803 (2004-01-01), Chung et al.
patent: 2004/0108587 (2004-06-01), Chudzik et al.

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