Capacitor of semiconductor device and method for forming the...

Details Capacitor of semiconductor device and method for forming the... Capacitor of semiconductor device and method for forming the...

2011-04-12

2011-04-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C257S532000, C257SE21350, C257SE29343

Reexamination Certificate

active

07923343

ABSTRACT:
A method for forming a capacitor of a semiconductor device includes forming a cylindrical storage node over a semiconductor substrate; depositing a first dielectric layer over the cylindrical storage node; and etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node. The method further includes depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node. Finally, a cell plate is formed over the second dielectric layer.

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patent: 2004-288710 (2004-10-01), None
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patent: 10-2004-0059442 (2004-07-01), None
patent: 10-2006-0017261 (2006-02-01), None
patent: 10-2008-0002912 (2008-01-01), None
patent: 10-2008-0003031 (2008-01-01), None
patent: 10-2008-0038713 (2008-05-01), None

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