Capacitor of a semiconductor device and memory device using...

Details Capacitor of a semiconductor device and memory device using... Capacitor of a semiconductor device and memory device using...

2006-08-01

2006-08-01

Clark, S. V. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S296000

Reexamination Certificate

active

07084482

ABSTRACT:
A capacitor of a semiconductor device includes a lower electrode, a dielectric layer, including a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. A band gap of the plurality of band gaps in the dielectric layer that is not adjacent to either the lower electrode or the upper electrode is smaller than a band gap of the plurality of band gaps in the dielectric layer adjacent to the lower electrode and a band gap of the plurality of band gaps in the dielectric layer adjacent to the upper electrode.

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patent: 2003/0036239 (2003-02-01), Lim et al.
patent: 0 046 868 (1982-03-01), None

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