Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-03-29
2010-12-28
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S303000, C257S306000, C257S309000, C257SE27092, C257SE21646, C257SE21648
Reexamination Certificate
active
07859081
ABSTRACT:
A capacitor includes a substrate (110, 210), a first electrically insulating layer (120, 220) over the substrate, and a fin (130, 231) including a semiconducting material (135) over the first electrically insulating layer. A first electrically conducting layer (140, 810) is located over the first electrically insulating layer and adjacent to the fin. A second electrically insulating layer (150, 910) is located adjacent to the first electrically conducting layer, and a second electrically conducting layer (160, 1010) is located adjacent to the second electrically insulating layer. The first and second electrically conducting layers together with the second electrically insulating layer form a metal-insulator-metal stack that greatly increases the capacitance area of the capacitor. In one embodiment the capacitor is formed using what may be referred to as a removable metal gate (RMG) approach.
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Chau Robert S.
Datta Suman
De Vivek
Doyle Brian S.
Keshavarzi Ali
Andújar Leonardo
Harriston William
Intel Corporation
Nelson Kenneth A.
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