Capacitor memory and methods for reading, writing, and fabricati

Details Capacitor memory and methods for reading, writing, and fabricati Capacitor memory and methods for reading, writing, and fabricati

1982-01-04

1983-05-17

Munson, Gene M.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 45, 357 48, 357 49, 357 50, 357 54, 357 55, 357 59, 357 89, 365149, 365184, H01L 2978, H01L 2702, H01L 2710, H01L 2704

Patent

active

043842992

ABSTRACT:
An improved metal dual insulator semiconductor capacitor memory is disclosed. The memory contains a plurality of capacitor cells, each cell comprising a semiconductor substrate layer and a high conductivity layer sandwiching two insulator layers. The substrate is doped to provide avalanche breakdown in a surface depletion layer at a voltage comparable to the write voltage in the accumulation direction. The invention also provides a method of reading stored information without disturbing adjacent cells. A small variable voltage is applied across a "flat-band" portion of the hysteresis loop describing the voltage-capacitance relationship for the capacitor memory. A change or the absence of a change in the current through the capacitor indicates the state of the capacitor cell. Methods to fabricate the memory are also disclosed.

REFERENCES:
patent: 3590337 (1971-06-01), Wegener
patent: 3602982 (1971-09-01), Kooi
patent: 3604988 (1971-09-01), Kahng et al.
patent: 3611070 (1971-10-01), Engeler
patent: 3838405 (1974-09-01), Arnett et al.
patent: 3859642 (1975-01-01), Mar
patent: 3877054 (1975-04-01), Boulin et al.
patent: 3911562 (1975-10-01), Youmans
patent: 3994011 (1976-11-01), Misawa et al.
patent: 4068217 (1978-01-01), Arnett et al.
patent: 4084174 (1978-04-01), Crippen et al.
patent: 4127900 (1978-11-01), Raffel et al.
Gregor, "Capacitor Storage Cell", IBM Technical Disclosure Bulletin, vol. 12, (6/69), p. 202.
Chang, "Nonvolatile Semiconductor Memory Devices", Proc. IEEE, vol. 64, (7/76), pp. 1039-1059.
Appels et al., "Local Oxidation of Silicon. . . ", Philips Res. Reports, vol. 25, (1970), pp. 118-132.

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