Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-07-09
1998-06-02
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257296, 257306, 257751, 257765, 257771, 438396, H01L 2348, H01L 27108
Patent
active
057604746
ABSTRACT:
A capacitor having a pair of conductive electrodes separated by a dielectric layer and wherein at least one of the electrodes comprise Ti.sub.x Al.sub.1-x N, and wherein the variable "x" lies in a range of about 0.4 to about 0.8. The invention also contemplates a method for forming an electrically conductive diffusion barrier on a silicon substrate and which comprises providing a chemical vapor deposition reactor having a chamber; positioning the silicon substrate in the chemical vapor deposition reactor chamber; providing a source of gaseous titanium aluminum and nitrogen to the chemical vapor deposition reactor chamber; and providing temperature and pressure conditions in the chemical vapor deposition reactor chamber effective to deposit an electrically conductive diffusion barrier layer on the silicon substrate comprising Ti.sub.x Al.sub.1-x N, and wherein the variable "x" is in a range of about 0.4 to about 0.8.
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patent: 5231306 (1993-07-01), Meikle et al.
patent: 5318840 (1994-06-01), Ikeda et al.
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5656383 (1997-08-01), Tanaka et al.
Micro)n Technology, Inc.
Wallace Valencia
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