Capacitor in semiconductor device and method for fabricating...

Details Capacitor in semiconductor device and method for fabricating... Capacitor in semiconductor device and method for fabricating...

2008-05-06

2008-05-06

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C257SE21664

Reexamination Certificate

active

07368300

ABSTRACT:
The present invention relates to a capacitor in a semiconductor device and a method for fabricating the same. The capacitor fabrication method includes the steps of: forming a lower electrode by using a thin film of (Ba,Sr)RuO3(BSR) on a substrate provided with various device elements; forming a dielectric layer on the lower electrode by using a thin film of barium strontium titanate (BST); and forming an upper electrode on the dielectric layer.

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patent: 2003/0116849 (2003-06-01), Suzuki et al.
patent: 2001 39520 (2001-05-01), None
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Notice of Preliminary Rejection mailed on Mar. 16, 2006, issued by the Korean Intellectual Property Office in counterpart Korean Application No. 2004-60447 and English translation thereof.

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