Capacitor in semiconductor device

Details Capacitor in semiconductor device Capacitor in semiconductor device

1989-11-06

1991-05-21

James, Andrew J.

357 51, 357 54, H01L 2968

Patent

active

050179829

ABSTRACT:
A capacitor including two electrode layers and a dielectric interposed between the electrode layers. The dielectric layer includes a silicon nitride film and a silicon oxide film formed on the surface of the silicon nitride film. The thickness of the silicon oxide film is not smaller than 25 .ANG. and not larger than 35 .ANG.. In this thickness range there is attained the maximum capacitor life. The capacitor is used in a semiconductor memory, improving the device reliability.

REFERENCES:
patent: 4922312 (1990-05-01), Coleman et al.
patent: 4931897 (1990-06-01), Tsukamoto et al.
"Breakdown Characteristics of 30P-c-4 SiO.sub.2 /Si.sub.3 N.sub.4 Double Layer Film", (A Paper of the Japanese Society of Applied Physics, Mar. 28, 1987, p. 557.
"TDDB Characteristics in 19P-N-3 MONOS Structure" (A Paper of the Japanese Society of Applied Physics, Oct. 17, 1987, p. 570.
"Inter-Poly SiO.sub.2 /Si.sub.3 N.sub.4 Capacitor Films 5 nm Thick for Deep Submicron LSIs" (Extended Abstracts of the 20th Conf. on Solid State Devices & Materials, 173-176.
"Reliability of Nano-Meter Thick Multi-Layer Dielectric Films on Polycrystalline Silicon" (25th Annual Proceedings of Reliability Physics, 1987, pp. 55-59.

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