Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-05-17
2005-05-17
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S756000, C257S761000, C257S767000
Reexamination Certificate
active
06894364
ABSTRACT:
A fabrication method for an integrated device having a capacitor in an interconnect system is described. At least a first exposed metal line and a second metal line are provided in an insulating layer. A stack layer is deposited and patterned to form a film stack structure over the second metal line. An inter-metal dielectric layer is formed over the film stack structure, the first metal line and the insulating layer. At least a first dual damascene interconnect and a second dual damascene interconnect are formed over and in contact with the first metal line and the film stack structure, respectively.
REFERENCES:
patent: 5063177 (1991-11-01), Geller et al.
patent: 5451551 (1995-09-01), Krishnan et al.
patent: 20010020713 (2001-09-01), Yoshitomi et al.
patent: 20030211731 (2003-11-01), Kai et al.
patent: 20040106266 (2004-06-01), Huang et al.
Chen Coming
Hao Ming-Yin
Hsieh Tsong-Minn
Peng Nai-Chen
Yeh Jih-Cheng
Brewster William M.
Jiang Chyun IP Office
United Microelectronics Corp.
LandOfFree
Capacitor in an interconnect system and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor in an interconnect system and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor in an interconnect system and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3402671