Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-07-24
1999-11-23
Fahmy, Wael M.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438738, H01L 2170
Patent
active
059899727
ABSTRACT:
A capacitor in a semiconductor configuration, especially a DRAM, includes an electrode structure having a plurality of spaced-apart elements being electrically connected with a connecting structure and all including p-conductive material with a doping >10.sup.10 cm.sup.-3. The elements of the electrode structure are either stacked or disposed side by side and may be cup-shaped. In a production process, a layer sequence of alternatingly one p.sup.- -doped and one p.sup.+ -doped layer is produced, which receives an opening through the use of anisotropic etching. At least in a peripheral region of the opening, a p.sup.+ -zone is created, which connects the layer sequence and forms the connecting structure. Next, the p.sup.- -doped layers are etched selectively to the p.sup.+ -doped layers, a capacitor dielectric is deposited, and a counterelectrode is produced.
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Hoenlein Wolfgang
Melzner Hanno
Widmann Dietrich
Coleman William David
Fahmy Wael M.
Greenberg Laurence A.
Lerner Herbert L.
Siemens Aktiengesellschaft
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