Capacitor in a pixel structure

Details Capacitor in a pixel structure Capacitor in a pixel structure

2005-09-13

2005-09-13

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S059000, C257S532000

Reexamination Certificate

active

06943375

ABSTRACT:
A capacitor in a pixel structure deposited under a pixel electrode comprises a top electrode, a bottom electrode, and a dielectric layer between the top electrode and the bottom electrode. The top electrode comprises a coupling part and a protruding part, wherein the coupling part corresponds to the bottom electrode for forming a coupling region between the coupling part and the bottom electrode, and the protruding part exceeds the coupling region. Furthermore, a passivation layer covers the top electrode, and an opening formed in the passivation layer exposes the protruding part of the top electrode. The pixel electrode is on the passivation layer and electrically connects with the top electrode through the opening.

REFERENCES:
patent: 6777709 (2004-08-01), Wu et al.
patent: 6797961 (2004-09-01), Choo et al.

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