Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2004-08-25
2010-11-30
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S296000, C257S306000
Reexamination Certificate
active
07843034
ABSTRACT:
The semiconductor device comprises a device isolation region14formed in a semiconductor substrate10,a lower electrode16formed in a device region12defined by the device isolation region and formed of an impurity diffused layer, a dielectric film18of a thermal oxide film formed on the lower electrode, an upper electrode20formed on the dielectric film, an insulation layer26formed on the semiconductor substrate, covering the upper electrode, a first conductor plug30aburied in a first contact hole28aformed down to the lower electrode, and a second conductor plug30bburied in a second contact hole28bformed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode20is not formed in the device isolation region14,whereby the short-circuit between the upper electrode20and the lower electrode16in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.
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Matsuoka Yoshihiro
Watanabe Akiyoshi
Yasuda Makoto
Fujitsu Semiconductor Limited
Nadav Ori
Westerman Hattori Daniels & Adrian LLP
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