Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-11-01
2005-11-01
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S398000, C438S240000
Reexamination Certificate
active
06960513
ABSTRACT:
A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second electrodes. The present invention may be used to form devices, such as memory devices and processors. The present invention also includes a method of making a capacitor. The method includes forming a first electrode selected from a group consisting of transition metals, conductive metal-oxides, and alloys thereof. The method also includes forming a second electrode and forming a dielectric between the first and second electrodes.
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Gealy F. Daniel
Graettinger Thomas M.
Kirkpatrick & Lockhart Nicholson & Graham LLP
Micro)n Technology, Inc.
Trinh Michael
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