Capacitor having an anodic metal oxide substrate

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C438S393000, C361S303000, C977S762000

Reexamination Certificate

active

11326631

ABSTRACT:
A structure and method including an anodic metal oxide substrate used to form a capacitor are described herein.

REFERENCES:
patent: 6262877 (2001-07-01), Mosley
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6800886 (2004-10-01), Awano
patent: 6819001 (2004-11-01), Burdick, Jr. et al.
patent: 6828786 (2004-12-01), Scherer et al.
patent: 6842328 (2005-01-01), Schott et al.
patent: 6858891 (2005-02-01), Farnworth et al.
patent: 6869671 (2005-03-01), Crouse et al.
patent: 6891319 (2005-05-01), Dean et al.
patent: 2004/0087102 (2004-05-01), Nagai et al.
patent: 2005/0136609 (2005-06-01), Mosley et al.
Rabin et al., “Arrays of Nanowires on Silicon Wafers,” Aug. 25-29, 2002, IEEE, pp. 276-279.
Nielsch et al., “Switching Behavior of Single Nanowires Inside Dense Nickel Nanowire Arrays,” Sep. 2002, pp. 2571-2573.
Lu et al., “Synthesis and characterization of conducting copolymer nanofibrils of pyrrole and 3-methylthiophene using the template-synthese method,” Materials Science and Engineering A334, 2002, pp. 291-297.
Peng et al., “Magnetic properties and magnetization reversal of∝-Fe nanowires deposited in alumina film,” J. of Applied Physics, vol. 87, No. 10, May 15, 2000, pp. 7405-7408.

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