Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2006-07-31
2010-02-16
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S386000, C438S398000, C438S399000, C361S292000, C361S298200, C361S299400, C361S303000, C257S303000, C257S306000, C257S309000, C257SE21008, C257SE21013
Reexamination Certificate
active
07662694
ABSTRACT:
The capacitance of a capacitor is adjusted by forming openings in one of a pair of electrodes of the capacitor, the openings having different sizes d1, d2, d3, . . . , wherein d1>d2>d3> . . . and being arranged in numbers n1, n2, n3, . . . , respectively; and sequentially filling a necessary number of the openings with an electroconductive material in descending order of the size so as to adjust the capacitance gradually with an increasing degree of precision. The resulting capacitor is mounted to a printed wiring board.
REFERENCES:
patent: 5164881 (1992-11-01), Ahn
patent: 6375823 (2002-04-01), Matsuda et al.
patent: 10-303062 (1998-11-01), None
patent: 2000-232078 (2000-08-01), None
patent: 2000-340454 (2000-12-01), None
Kariya Takashi
Mano Yasuhiko
Sakamoto Hajime
Ibiden Co. Ltd.
Nguyen Dao H
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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